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?1 ILX533K 22 pin dip (cer-dip) e97406b79-ps 2700 pixel 3 line ccd linear sensor (color) description the ILX533K is a reduction type ccd linear sensor developed for color image scanner. the distance between lines is only 4 line (32m). this sensor reads a4-size documents at a density of 300dpi. features number of effective pixels: 8100 pixels (2700 pixels 3) pixel size: 8m 8m (8m pitch) distance between line: 32m (4 lines) number of output 3 (r, g, b) single-sided readout clamp circuit are on-chip ultra high sensitivity/ultra low lag single 12v power supply maximum data rate: 9mhz (3mhz 3) input clock pulse: cmos 5v drive package: 22 pin cer-dip (400 mil) absolute maximum ratings supply voltage v dd 15 v operating temperature ?0 to +55 ? storage temperature ?0 to +80 ? pin configuration (top view) block diagram sony reserves the right to change products and specifications without prior notice. this information does not convey any license by any implication or otherwise under any patents or other right. application circuits shown, if any, are typical examples illustrating the operation of the devices. sony cannot assume responsibility for any problems arising out of the use of these circuits. 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 1 2700 r 1 2700 g 1 2700 b 1 gnd gnd v out-b nc nc nc nc nc f 2 f rog -r f rog -g f rs v out-r v dd nc nc nc nc nc f 1 f rog -b v out-g a a a a d14 d15 d63 s1 read out gate ccd register s2700 driver a a a a d14 d15 d63 s1 read out gate ccd register s2700 driver a a d14 d15 d63 s1 read out gate ccd register s2700 driver driver blue green red f rog -b f rog -g f rog -r v out-b v out-g v out-r v dd f 2 gnd f rs f 1 20 4 13 12 10 11 3 2 1 14 21 clamp pulse generator clamp clamp clamp
?2 ILX533K pin description pin no. symbol description pin no. symbol description 1 2 3 4 5 6 7 8 9 10 11 f rs v out-r v out-g v dd nc nc nc nc nc f 1 f rog -b clock pulse input signal out (red) signal out (green) 12v power supply nc nc nc nc nc clock pulse input clock pulse input 12 13 14 15 16 17 18 19 20 21 22 f rog- g f rog- r f 2 nc nc nc nc nc v out-b gnd gnd clock pulse input clock pulse input clock pulse input nc nc nc nc nc signal out (blue) gnd gnd recommended supply voltage item v dd min. 11.4 typ. 12 max. 12.6 unit v clock characteristics symbol c f 1, c f 2 c f rs c f rog min. typ. 400 10 10 max. unit pf pf pf item input capacity of f 1, f 2 input capacity of f rs input capacity of f rog * 1 input clock pulse voltage condition high level low level min. 4.75 typ. 5.0 0 max. 5.25 0.1 unit v v item f 1, f 2, f rs, f rog pulse voltage * 1 it indicates that f rog- r , f rog- g , f rog- b as f rog. clock frequency min. typ. 1 max. 3 unit mhz item symbol f 1, f 2, f rs f f 1, f f 2, f f rs
?3 ILX533K electrooptical characteristics (note 1) ta = 25?, v dd = 12v, f f rs = 1mhz, input clock = 5vp-p, light source = 3200k, ir cut filter cm-500s (t = 1.0mm) item symbol min. typ. max. unit remarks sensitivity sensitivity nonuniformity saturation output voltage saturation exposure dark voltage average dark signal nonuniformity image lag supply current total transfer efficiency output impedance offset level r r r g r b prnu v sat se r se g se b v drk dsnu il i vdd tte z o v os 6.2 12.3 7.5 2.0 0.15 0.10 0.12 92 9.5 19 11.5 4 2.5 0.26 0.13 0.21 2 4 0.02 30 98 300 6.3 12.8 25.6 15.5 20 5 12 50 v/(lx ?s) % v lx ?s mv mv % ma % v note 2 note 3 note 4 note 5 note 6 note 6 note 7 note 8 red green blue red green blue note 1) in accordance with the given electrooptical characteristics, the black level is defined as the average value of d2, d3 to d12. 2) for the sensitivity test light is applied with a uniform intensity of illumination. 3) prnu is defined as indicated below. ray incidence conditions are the same as for note 2. v out-g = 500mv (typ.) prnu = 100 [%] where the 2700 pixels are divided into blocks of 100. the maximum output of each block is set to v max , the minimum output to v min and the average output to v ave . 4) use below the minimum value of the saturation output voltage. 5) saturation exposure is defined as follows. se = where r indicates r r , r g , r b , and se indicates se r , se g , se b . 6) optical signal accumulated time t int stands at 5ms. 7) v out-g = 500mv (typ.) 8) vos is defined as the right side. v out indicates v out-r , v out-g , and v out-b . (v max ?v min ) /2 v ave aa aa aa aa v os v out gnd v sat r
?4 ILX533K 2 1 3 4 2770 f rog f 1 f 2 f rs a a a a a d1 d2 d3 d13 d14 d15 d61 d62 d63 s1 d64 d70 optical black (49 pixels) dummy signal (63 pixels) 1-line output period v out noto) the transfer pulses ( f 1, f 2) must have more than 2770 cycles. v out indicates v out-r , v out-g , v out-b . s2698 s2 a s2699 s2700 d65 aa 5 0 5 0 5 0 5 0 clock timing chart 1
?5 ILX533K clock timing chart 2 t4 t5 t2 t1 t3 t7 t6 f rog f 1 f 2 clock timing chart 3 aaa aaa aaa aaaaaaaa aaaaaaaa aaaaaaaa t7 f 1 f 2 v out t6 t9 t10 t11 t13 t12 t8 f rs t14
?6 ILX533K clock pulse recommended timing symbol t1 t2 t3 t4 t5 t6 t7 t8 t9 t10 t11 t12 t13 t14 min. 50 800 800 0 0 0 0 50 80 0 0 50 typ. 100 1000 1000 5 5 20 20 250 * 1 250 * 1 10 10 70 10 250 * 1 max. 10 10 60 60 30 30 unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns item f rog, f 1 pulse timing f rog pulse high level period f rog, f 1 pulse timing f rog pulse rise time f rog pulse fall time f 1 pulse rise time/ f 2 pulse fall time f 1 pulse fall time/ f 2 pulse rise time f rs pulse high level period f rs, f 1 pulse timing 1 f rs pulse rise time f rs pulse fall time signal output delay time f rs, f 1/ f 2 pulse timing 2 * 1 these timing is the recommended condition under f f rs = 1mhz.
?7 ILX533K 2 3 4 5 10 11 12 13 14 15 20 f rs v out-r v dd nc nc nc nc nc f 1 gnd v out-b nc nc nc f 2 f rog -r f rog -g ic1 2 w 100 w v out-r 0.1f 47f/16v 12v f rog -b f 1 100 w tr1 5.1k w v out-b 2 w ic1 f 2 f rog -r f rog -g ic1 : 74ac04 tr1 : 2sc2785 tr1 5.1k w 16 17 18 19 21 22 tr1 v out-g 100 w 6 7 8 9 1 f rs v out-g gnd nc nc f rog -b 5.1k w * data rate f f rs = 1mhz ic1 application circuit * application circuits shown are typical examples illustrating the operation of the devices. sony cannot assume responsibility for any problems arising out of the use of these circuits or for any infringement of third party patent and other right due to same.
?8 ILX533K example of representative characteristics (v dd = 12v, ta = 25?) 1 0.8 0.6 0.4 0.2 0 wavelength [nm] relative sensitivity spectral sensitivity characteristics (standard characteristics) 1 0 ta ?ambient temperature [?] output voltage rate dark signal output temperature characteristics (standard characteristics) 10 5 0.5 0.1 10 20 30 40 50 60 1 t int ?integration time [ms] output voltage rate integration time output voltage characteristics (standard characteristics) 1 0.5 0.1 510 v dd [v] v os ?offset level [v] offset level vs. v dd characteristics (standard characteristics) 12 12 10 8 6 4 2 0 11.4 12.6 ta = 25? d v os d v dd 0.6 ta ?ambient temperature [?] v os ?offset level [v] offset level vs. temperature characteristics (standard characteristics) 12 10 8 6 4 2 0 0 d v os d ta +0.5mv/? 10 20 30 40 50 60 400 450 500 550 600 650 700
?9 ILX533K notes of handling 1) static charge prevention ccd image sensors are easily damaged by static discharge. before handling be sure to take the following protective measures. a) either handle bare handed or use non chargeable gloves, clothes or material. also use conductive shoes. b) when handling directly use an earth band. c) install a conductive mat on the floor or working table to prevent the generation of static electricity. d) ionized air is recommended for discharge when handling ccd image sensor. e) for the shipment of mounted substrates, use boxes treated for prevention of static charges. 2) notes on handling ccd cer-dip packages the following points should be observed when handling and installing cer-dip packages. a) remain within the following limits when applying static load to the ceramic portion of the package: (1) compressive strength: 39n/surface (do not apply load more than 0.7mm inside the outer perimeter of the glass portion.) (2) shearing strength: 29n/surface (3) tensile strength: 29n/surface (4) torsional strength: 0.9nm b) in addition, if a load is applied to the entire surface by a hard component, bending stress may be generated and the package may fracture, etc., depending on the flatness of the ceramic portion. therefore, for installation, either use an elastic load, such as a spring plate, or an adhesive. c) be aware that any of the following can cause the glass to crack: because the upper and lower ceramic layers are shielded by low-melting glass, (1) applying repetitive bending stress to the external leads. (2) applying heat to the external leads for an extended period of time with soldering iron. (3) rapid cooling or heating. (4) rapid cooling or impact to a limited portion of the low-melting glass with a small-tipped tool such as tweezers. (5) prying the upper or lower ceramic layers away at a support point of the low-melting glass. note that the preceding notes should also be observed when removing a component from a board after it has already been soldered. 3) soldering a) make sure the package temperature does not exceed 80?. b) solder dipping in a mounting furnace causes damage to the glass and other defects. use a grounded 30w soldering iron and solder each pin in less then 2 seconds. for repairs and remount, cool sufficiently. c) to dismount an imaging device, do not use a solder suction equipment. when using an electric desoldering tool, ground the controller. for the control system, use a zero cross type. aaaa aaaa aaaa aaaa aaaa aaaa aaaa aaaa aaaa aaaa aaaa aaaa 29n 29n 0.9nm (2) (3) (4) 39n low-melting glass (1) upper ceramic layer lower ceramic layer
?10 ILX533K 4) dust and dirt protection a) operate in clean environments. b) do not either touch glass plates by hand or have any object come in contact with glass surfaces. should dirt stick to a glass surface, blow it off with an air blower. (for dirt stuck through static electricity ionized air is recommended.) c) clean with a cotton bud and ethyl alcohol if the glass surface is grease stained. be careful not to scratch the glass. d) keep in a case to protect from dust and dirt. to prevent dew condensation, preheat or precool when moving to a room with great temperature differences. 5) exposure to high temperatures or humidity will affect the characteristics. accordingly avoid storage or usage in such conditions. 6) ccd image sensors are precise optical equipment that should not be subject to mechanical shocks.
?11 ILX533K package outline unit: mm package structure 1 22 5.0 0.5 h v no.1 pixel (green) 11 12 0?to 9 (at stand off) 0.25 1. the height from the bottom to the sensor surface is 1.61 0.3mm. 2. the thickness of the cover glass is 0.7mm, and the refractive index is 1.5. 32.0 0.5 10.0 0.5 9.0 10.16 4.0 0.5 2.54 0.51 2.7 3.4 0.5 22pin dip (400mil) 21.6 (8m 2700pixels) 5.8 0.8 30.6 package material lead treatment lead material package weight cer-dip tin plating 42 alloy 3.0g m 0.3

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